Title :
A wideband resistive feedback balun LNA in 65 nm CMOS technology
Author :
Popuri, Suchendranath ; Xiang, X. ; Sturm, Jurgen
Author_Institution :
Josef Ressel Center for Integrated CMOS RF Syst. & Circuits Design, Carinthia Univ. of Appl. Sci., Villach, Austria
Abstract :
A wideband resistive feedback balun low noise amplifier (LNA) is presented in this paper. The proposed LNA has a wide band gain of 22 dB in a band of 0.2-5 GHz. An improved input balun stage is used to realize a single-ended to differential conversion with optimized transconductance and amplifier open-loop gain. The wide band LNA is implemented in 65nm CMOS technology and has an area of about 0.009 mm2. The power consumption is below 16 mW at 1.2 V single supply. Due to different noise cancellation techniques employed, the proposed LNA achieves a superior low noise figure (NF) of 1.7 dB at 2.5 GHZ. The IIP3 linearity and 1 dB compression point of the LNA are about -4dBm and -161 dBm at 2 GHz respectively. The achieved performance results make the proposed LNA a competitive solution for RF applications up to 5 GHz.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; baluns; feedback amplifiers; field effect MMIC; low noise amplifiers; operational amplifiers; wideband amplifiers; CMOS technology; amplifier open-loop gain; frequency 0.2 GHz to 5 GHz; gain 22 dB; improved input balun stage; noise cancellation techniques; noise figure 1.7 dB; optimized transconductance amplifier; power consumption; single-ended to differential conversion; size 65 nm; voltage 1.2 V; wideband resistive feedback balun LNA; wideband resistive feedback balun low noise amplifier; CMOS integrated circuits; Gain; Impedance matching; Noise; Noise measurement; Radio frequency; Transistors;
Conference_Titel :
Microelectronics (Austrochip), 22nd Austrian Workshop on
Conference_Location :
Graz
Print_ISBN :
978-1-4799-7243-2
DOI :
10.1109/Austrochip.2014.6946322
