A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCN applications

Author

Muller, Jan-Erik ; Baureis, Peter ; Berger, Otto ; Boettner, Thomas ; Bovolon, Nicola ; Schultheis, Rudiger ; Packeiser, Gerhard ; Zwicknagl, Peter

Author_Institution

Corp. Res. & Dev., Siemens AG, Munich, Germany

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1277

Lastpage

1283

Abstract

This work describes the L-band low voltage (⩾1.6 V) power performance of AlGAs/GaAs heterojunction bipolar transistors (HBTs), their modeling and the design of a 2-W monolithic microwave integrated circuit (MMIC) for 3-V wireless mobile PCN applications (1800 MHz). The two-stage MMIC achieves 62% power-added efficiency (PAE) and 33 dB of linear gain, at a very small chip size of 1.2 mm². To our knowledge this is the best combination of power performance data for wireless applications demonstrated so far for a MMIC. The chip size is about a factor of four smaller than comparable MMIC´s known before. The MMIC offers the potential both for low cost production due to small chip size, single voltage supply, and high performance at the same time

Keywords

III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; mobile communication; personal communication networks; 1800 MHz; 2 W; 3 V; 33 dB; 62 percent; AlGaAs-GaAs; HBT MMIC; L-band; chip size; linear gain; power performance data; power-added efficiency; single voltage supply; wireless mobile PCN applications; Application specific integrated circuits; Bipolar integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; L-band; Low voltage; MMICs; Microwave integrated circuits; Personal communication networks;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711324

Filename

711324