Title :
A highly miniaturized front-end HIC for 1.9 GHz bands
Author :
Nakatsuka, Tadayoshi ; Itoh, Junji ; Yoshida, Takayuki ; Nishitsuji, Mitsuru ; Uda, Tomoya ; Ishikawa, Osamu
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
9/1/1998 12:00:00 AM
Abstract :
A miniaturized receiver front-end hybrid IC (HIC) using MBB (microbump bonding) technology has been demonstrated. A GaAs IC die was dip-chip bonded on a ceramic substrate with matching circuits on its surface. New technologies such as 0.5 μm gate buried p-layer MESFETs, on-chip high-dielectric constant capacitors, and intermediate tuned circuits have enabled miniaturization and low power-consumption at the same time. The fabricated HIC measured only 3.5×4.0×1.0 mm which corresponded to a 64% reduction from the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, noise figure of 5.1 dB, and image rejection ratio over 20 dBc were obtained for the new HIC at 1.9 GHz, 3.0 V, and 4.5 mA of power supply
Keywords :
UHF integrated circuits; circuit tuning; flip-chip devices; hybrid integrated circuits; lead bonding; mobile communication; 0.5 micron; 1.9 GHz; 16.0 dB; 3.0 V; 4.5 mA; 5.1 dB; GaAs; buried p-layer MESFETs; conversion gain; dip-chip bond; high-dielectric constant capacitors; image rejection ratio; intermediate tuned circuits; matching circuits; microbump bonding technology; power consumption; receiver front-end hybrid IC; Bonding; Capacitors; Ceramics; Dielectric substrates; Gain; Gallium arsenide; Hybrid integrated circuits; Image converters; MESFETs; RLC circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
