A highly miniaturized front-end HIC for 1.9 GHz bands

Author

Nakatsuka, Tadayoshi ; Itoh, Junji ; Yoshida, Takayuki ; Nishitsuji, Mitsuru ; Uda, Tomoya ; Ishikawa, Osamu

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1284

Lastpage

1289

Abstract

A miniaturized receiver front-end hybrid IC (HIC) using MBB (microbump bonding) technology has been demonstrated. A GaAs IC die was dip-chip bonded on a ceramic substrate with matching circuits on its surface. New technologies such as 0.5 μm gate buried p-layer MESFETs, on-chip high-dielectric constant capacitors, and intermediate tuned circuits have enabled miniaturization and low power-consumption at the same time. The fabricated HIC measured only 3.5×4.0×1.0 mm which corresponded to a 64% reduction from the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, noise figure of 5.1 dB, and image rejection ratio over 20 dBc were obtained for the new HIC at 1.9 GHz, 3.0 V, and 4.5 mA of power supply

Keywords

UHF integrated circuits; circuit tuning; flip-chip devices; hybrid integrated circuits; lead bonding; mobile communication; 0.5 micron; 1.9 GHz; 16.0 dB; 3.0 V; 4.5 mA; 5.1 dB; GaAs; buried p-layer MESFETs; conversion gain; dip-chip bond; high-dielectric constant capacitors; image rejection ratio; intermediate tuned circuits; matching circuits; microbump bonding technology; power consumption; receiver front-end hybrid IC; Bonding; Capacitors; Ceramics; Dielectric substrates; Gain; Gallium arsenide; Hybrid integrated circuits; Image converters; MESFETs; RLC circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711325

Filename

711325