Very-high-speed InP/InGaAs HBT ICs for optical transmission systems

Author

Suzuki, Hideyuki ; Watanabe, Koichi ; Ishikawa, Kyosuke ; Masuda, Hiroshi ; Ouchi, Kiyoshi ; Tanoue, Tomonori ; Takeyari, Ryoji

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1313

Lastpage

1320

Abstract

High-speed ICs for 20-40-Gbit/s time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP/InGaAs heterojunction-bipolar-transistor (HBT) technology. This paper describes four analog ICs and four digital ICs: a five-section cascode distributed amplifier with a gain of 9.5 dB and a bandwidth of 50 GHz, a three-section single-end-to-differential converter with a bandwidth of 40 GHz, a cascode differential amplifier with a gain of 10.5 dB and a bandwidth of 64 GHz, a preamplifier with a gain of 41.9 dBΩ and a bandwidth of 39 GHz, a modulator driver with an output voltage swing of 3.2 V peak-to-peak and rise and fall times of 16 and 15 ps, a 40-Gbit/s selector, a 20-Gbit/s D-type flip-flop, and a static frequency divider with an operating range of 2.0-44.0 GHz. All the ICs were measured with on-wafer RF probes

Keywords

III-V semiconductors; bipolar analogue integrated circuits; bipolar digital integrated circuits; differential amplifiers; distributed amplifiers; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; optical communication equipment; optical fibre communication; preamplifiers; time division multiplexing; 10.5 dB; 15 to 16 ps; 20 to 40 Gbit/s; 3.2 V; 39 GHz; 40 GHz; 50 GHz; 64 GHz; 9.5 dB; D-type flip-flop; III-V semiconductors; InP-InGaAs; cascode differential amplifier; cascode distributed amplifier; modulator driver; on-wafer RF probes; optical transmission systems; preamplifier; single-end-to-differential converter; static frequency divider; time-division multiplexing; very-high-speed HBT ICs; Bandwidth; Distributed amplifiers; Gain; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical design; Stimulated emission; Time division multiplexing;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711329

Filename

711329