Title :
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
Author :
Otsuji, Taiichi ; Murata, Koichi ; Enoki, Takatomo ; Umeda, Yohtaro
Author_Institution :
NTT Opt. Network Syst. Labs., Yokosuka, Japan
fDate :
9/1/1998 12:00:00 AM
Abstract :
This paper describes the design and performance of an 80-Gbit/s 2:1 selector-type multiplexer IC fabricated with InAlAs/InGaAs/InP HEMTs. By using a double-layer interconnection process with a low-dielectric insulator, microstrip lines were designed to make impedance-matched, high-speed intercell connection of critical signal paths. The record operating data rate was measured on a 3-in wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the first time. The obtained circuit speed improvement from the previous result of 64 Gbit/s owes much to this high-speed interconnection design
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated circuit interconnections; multiplexing equipment; optical communication equipment; optical fibre communication; photonic switching systems; 3 in; 80 Gbit/s; HEMTs; InAlAs-InGaAs-InP; bandwidth limitation; critical signal paths; double-layer interconnection process; eye patterns; high-speed intercell connection; high-speed interconnection design; low-dielectric insulator; microstrip lines; optical fibre communication systems; selector-type multiplexer IC; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Insulation; Integrated circuit interconnections; MODFETs; Microstrip; Multiplexing; Signal design;
Journal_Title :
Solid-State Circuits, IEEE Journal of
