Title :
50-GHz-bandwidth baseband amplifiers using GaAs-based HBTs
Author :
Suzuki, Yasuyuki ; Shimawaki, Hidenori ; Amamiya, Yasushi ; Nagano, Nobuo ; Niwa, Takaki ; Yano, Hitoshi ; Honjo, Kazuhiko
Author_Institution :
Optoelectron. & High Freqency Device Res. Lab., NEC Corp., Tsukuba, Japan
fDate :
9/1/1998 12:00:00 AM
Abstract :
Baseband amplifiers of 50 GHz, using high-performance AlGaAs/InGaAs HBTs with regrown base contacts, have been demonstrated. The transimpedance amplifier achieved a bandwidth of 50.8 GHz with a gain of 11.6 dB. The transimpedance characteristics were of 49.3-GHz bandwidth with a 43.7-dBΩ transimpedance gain. The resistive and mirror Darlington feedback amplifiers, respectively, achieved a bandwidth of 54.7 GHz with a gain of 8.2 dB and a bandwidth of more than 60.0 GHz with a gain of 6.3 dB. To date, these are the widest bandwidths reported for lumped-circuit-design amplifiers. These results suggest the great potential of these amplifiers for use in future optical communication, microwave and millimeter-wave applications
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MIMIC; bipolar MMIC; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; lumped parameter networks; optical communication equipment; wideband amplifiers; 50 to 60 GHz; 6 to 12 dB; AlGaAs-InGaAs; Darlington feedback amplifiers; HBTs; baseband amplifiers; lumped-circuit-design amplifiers; microwave applications; millimeter-wave applications; optical communication; regrown base contacts; transimpedance amplifier; Bandwidth; Baseband; Feedback amplifiers; Gain; Indium gallium arsenide; Microwave amplifiers; Mirrors; Optical amplifiers; Optical fiber communication; Semiconductor optical amplifiers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
