DocumentCode :
1423177
Title :
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
Author :
Broekaert, Tom P E ; Brar, Berinder ; Van der Wagt, J. Paul A ; Seabaugh, Alan C. ; Morris, Frank J. ; Moise, Theodore S. ; Beam, Edward A., III ; Frazier, Gary A.
Author_Institution :
Appl. Res. Labs., Raytheon Syst., Dallas, TX, USA
Volume :
33
Issue :
9
fYear :
1998
fDate :
9/1/1998 12:00:00 AM
Firstpage :
1342
Lastpage :
1349
Abstract :
The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate and characterize the first monolithic flash analog-to-digital converter (ADC) in this technology. The first-pass ADC achieved 2.7 effective bits at 2 gigasamples per second (Gsps) for a 220-MHz input signal. The one-bit quantizer achieved a single-tone spurious free dynamic range greater than 40 dB at 2 Gsps for a 220-MHz single-tone input with dithering
Keywords :
field effect integrated circuits; mixed analogue-digital integrated circuits; quantisation (signal); resonant tunnelling diodes; 220 MHz; 4 bit; dithering; first-pass ADC; flash analog-to-digital converter; heterostructure field-effect transistors; mixed-signal applications; one-bit quantizer; resonant tunneling analog-to-digital converter; single-tone spurious free dynamic range; Analog-digital conversion; Circuits; Clocks; Diodes; HEMTs; Laboratories; MODFETs; Phased arrays; Resonant tunneling devices; Sampling methods;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.711333
Filename :
711333
Link To Document :
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