A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

Author

Broekaert, Tom P E ; Brar, Berinder ; Van der Wagt, J. Paul A ; Seabaugh, Alan C. ; Morris, Frank J. ; Moise, Theodore S. ; Beam, Edward A., III ; Frazier, Gary A.

Author_Institution

Appl. Res. Labs., Raytheon Syst., Dallas, TX, USA

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1342

Lastpage

1349

Abstract

The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate and characterize the first monolithic flash analog-to-digital converter (ADC) in this technology. The first-pass ADC achieved 2.7 effective bits at 2 gigasamples per second (Gsps) for a 220-MHz input signal. The one-bit quantizer achieved a single-tone spurious free dynamic range greater than 40 dB at 2 Gsps for a 220-MHz single-tone input with dithering

Keywords

field effect integrated circuits; mixed analogue-digital integrated circuits; quantisation (signal); resonant tunnelling diodes; 220 MHz; 4 bit; dithering; first-pass ADC; flash analog-to-digital converter; heterostructure field-effect transistors; mixed-signal applications; one-bit quantizer; resonant tunneling analog-to-digital converter; single-tone spurious free dynamic range; Analog-digital conversion; Circuits; Clocks; Diodes; HEMTs; Laboratories; MODFETs; Phased arrays; Resonant tunneling devices; Sampling methods;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711333

Filename

711333