Title :
Design of RF integrated circuits using SiGe bipolar technology
Author :
Gotzfried, Rainer ; Beisswanger, Frank ; Gerlach, Stephan
Author_Institution :
Temic Semicond. GmbH, Heilbronn, Germany
fDate :
9/1/1998 12:00:00 AM
Abstract :
We report on design aspects and the implementation of radio-frequency integrated circuits using TEMIC´s SiGe technology. The differences between the device parameters of silicon bipolar junction transistor and silicon germanium heterojunction bipolar transistor technology and their influence on IC design are discussed. Design and measurement results of RFICs, including low noise amplifier, power amplifier, and single-pole, double-throw antenna switch for application in a 1.9 GHz digital enhanced cordless telecommunications RF front end are presented
Keywords :
Ge-Si alloys; UHF integrated circuits; bipolar integrated circuits; integrated circuit design; semiconductor materials; 1.9 GHz; SiGe; SiGe bipolar technology; design; digital enhanced cordless telecommunications RF front end; low noise amplifier; power amplifier; radiofrequency integrated circuit; silicon bipolar junction transistor; silicon germanium heterojunction bipolar transistor; single-pole double-throw antenna switch; Bipolar integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon germanium; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
