Title :
On the measurement of crosstalk in integrated circuits
Author :
Caignet, Fabrice ; Dhia, Sonia Delmas-Ben ; Sicard, Etienne
Author_Institution :
DGEL, Inst. Nat. des Sci. Appliquees, Toulouse, France
Abstract :
This paper describes a specific technique for measuring and characterizing the time-domain aspect of the crosstalk effect based on a sampling technique. It includes the description of the circuit implementation in 0.7 /spl mu/m technology and the measurements of the crosstalk between metallization tracks within the chip, with a 10 ps resolution and 10 mV precision. A comparison between the measurements and analog simulations based on a distributed RC model is also included. The key advantages of this technique are that it is totally integrated, fully static, and adaptable to any CMOS technology.
Keywords :
CMOS integrated circuits; VLSI; crosstalk; electric noise measurement; integrated circuit measurement; integrated circuit noise; signal sampling; CMOS technology; analog simulations; crosstalk measurement; crosstalk noise; distributed RC model; integrated circuits; onchip measurement; sampling technique; submicron CMOS ICs; time-domain aspect; CMOS technology; Circuit simulation; Crosstalk; Integrated circuit measurements; Integrated circuit technology; Metallization; Sampling methods; Semiconductor device measurement; Semiconductor device modeling; Time domain analysis;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
