A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs

Author

Walter, K.M. ; Ebersman, B. ; Sunderland, D.A. ; Berg, G.D. ; Freeman, G.G. ; Groves, R.A. ; Jadus, D.K. ; Harame, D.L.

Author_Institution

Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA

Volume

33

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1439

Lastpage

1444

Abstract

A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBTs), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using language features built into HSPICE, DC and AC fit is good over a wide range in emitter sizes, allowing an open-ended set of devices to be used with valid modeling capabilities. Features of IBM´s HBT technology that contribute to the scaleability of the technology are discussed

Keywords

BiCMOS integrated circuits; Gaussian distribution; Ge-Si alloys; SPICE; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; statistical analysis; BiCMOS technology; HSPICE; IBM HBT technology; SPICE Gummel-Poon model; SiGe HBTs; heterojunction transistors; high-frequency applications; model parameters; scaleable statistical model; Bipolar transistors; Circuit simulation; Current density; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; SPICE; Silicon germanium; Statistical distributions;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.711345

Filename

711345