DocumentCode :
1423262
Title :
Interconnect and substrate modeling and analysis: an overview
Author :
Chiprout, Eli
Author_Institution :
Res. Lab., IBM Corp., Austin, TX, USA
Volume :
33
Issue :
9
fYear :
1998
fDate :
9/1/1998 12:00:00 AM
Firstpage :
1445
Lastpage :
1452
Abstract :
Accurate models for on-chip metal interconnect, silicon substrate, and packaging have become necessary for accurate simulation of high-performance ULSI circuits and high-speed RF designs. An overview of the hierarchy of techniques used to model and simulate these structures is given. While not an exhaustive summary, the purpose of the paper is to give the designer fundamental and practical understanding of principles used in modeling and analysis. The range of techniques from three-dimensional (3-D) modeling to quasi-3-D to transmission lines are analyzed, and their importance and impact are described. A modeling strategy that can include various kinds of modeling techniques and nonlinear devices in one simulation is also described
Keywords :
Maxwell equations; UHF integrated circuits; ULSI; equivalent circuits; integrated circuit interconnections; integrated circuit modelling; reviews; substrates; transmission line theory; 3D modeling; Si substrate; ULSI circuits; high-speed RF designs; interconnect modeling; modeling strategy; nonlinear devices; on-chip metal interconnect; quasi-3D modelling; substrate modeling; three-dimensional modeling; transmission lines; Circuit simulation; Coupling circuits; Distributed parameter circuits; Hybrid integrated circuits; Integrated circuit interconnections; Maxwell equations; Packaging; RLC circuits; Radio frequency; Semiconductor device modeling;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.711346
Filename :
711346
Link To Document :
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