• DocumentCode
    1423262
  • Title

    Interconnect and substrate modeling and analysis: an overview

  • Author

    Chiprout, Eli

  • Author_Institution
    Res. Lab., IBM Corp., Austin, TX, USA
  • Volume
    33
  • Issue
    9
  • fYear
    1998
  • fDate
    9/1/1998 12:00:00 AM
  • Firstpage
    1445
  • Lastpage
    1452
  • Abstract
    Accurate models for on-chip metal interconnect, silicon substrate, and packaging have become necessary for accurate simulation of high-performance ULSI circuits and high-speed RF designs. An overview of the hierarchy of techniques used to model and simulate these structures is given. While not an exhaustive summary, the purpose of the paper is to give the designer fundamental and practical understanding of principles used in modeling and analysis. The range of techniques from three-dimensional (3-D) modeling to quasi-3-D to transmission lines are analyzed, and their importance and impact are described. A modeling strategy that can include various kinds of modeling techniques and nonlinear devices in one simulation is also described
  • Keywords
    Maxwell equations; UHF integrated circuits; ULSI; equivalent circuits; integrated circuit interconnections; integrated circuit modelling; reviews; substrates; transmission line theory; 3D modeling; Si substrate; ULSI circuits; high-speed RF designs; interconnect modeling; modeling strategy; nonlinear devices; on-chip metal interconnect; quasi-3D modelling; substrate modeling; three-dimensional modeling; transmission lines; Circuit simulation; Coupling circuits; Distributed parameter circuits; Hybrid integrated circuits; Integrated circuit interconnections; Maxwell equations; Packaging; RLC circuits; Radio frequency; Semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.711346
  • Filename
    711346