DocumentCode :
1423268
Title :
A four-terminal compact model for high voltage diffused resistors with field plates
Author :
Victory, James ; McAndrew, Colin C. ; Hall, Jeff ; Zunino, Mike
Author_Institution :
Motorola Inc., Le Grand Saconnex, Switzerland
Volume :
33
Issue :
9
fYear :
1998
fDate :
9/1/1998 12:00:00 AM
Firstpage :
1453
Lastpage :
1458
Abstract :
This paper presents a four-terminal, physically based, high-voltage diffused resistor model. The model accounts for depletion, inversion, and accumulation at the surface due to the MOS effect of metal field plates, as well as the depletion pinching effect at the sides and bottom of the diffused resistor
Keywords :
BiCMOS integrated circuits; accumulation layers; integrated circuit modelling; inversion layers; power integrated circuits; resistors; semiconductor device models; HV diffused resistors; MOS effect; accumulation effect; depletion pinching effect; four-terminal compact model; high voltage resistors; inversion effect; metal field plates; resistor model; Circuit simulation; Doping; Immune system; Integrated circuit modeling; Isolation technology; Resistors; SPICE; Semiconductor process modeling; Solid modeling; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.711347
Filename :
711347
Link To Document :
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