Accurate design equations for 50-600 GHz GaAs Schottky diode varactor frequency doublers

Author

Lipsey, R.E. ; Jones, Stephen H.

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

45

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1876

Lastpage

1882

Abstract

To maintain the simplicity of equivalent circuit modeling while dramatically increasing accuracy, a set of analytical design equations are derived for nonlinear circuit analysis of 50-600 GHz Schottky diode varactor frequency doublers. These analytical design equations contain semi-empirical coefficients derived from a high performance Monte Carlo harmonic-balance (MCHB) numerical simulator. Both optimal diode embedding impedances and diode parameters for optimal doubler performance can be calculated. The calculated optimal embedding impedance is that which gives the best doubler efficiency for the given diode parameters, the circuit input power, and the input frequency. Thus, these equations allow for multiplier co-design from both a device and circuit point of view in a relatively simple, efficient and accurate manner

Keywords

III-V semiconductors; Monte Carlo methods; Schottky diodes; equivalent circuits; frequency multipliers; gallium arsenide; nonlinear network analysis; semiconductor device models; varactors; 50 to 600 GHz; GaAs; GaAs Schottky diode varactor frequency doubler; Monte Carlo harmonic balance numerical simulation; design; embedding impedance; equivalent circuit model; nonlinear circuit analysis; Circuit analysis; Equivalent circuits; Frequency; Gallium arsenide; Harmonic analysis; Impedance; Nonlinear circuits; Nonlinear equations; Schottky diodes; Varactors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.711350

Filename

711350