Long-wavelength 640×486 GaAs-AlGaAs quantum well infrared photodetector snap-shot camera

Author

Gunapala, Sarath D. ; Bundara, S.V. ; Liu, John K. ; Hong, Winn ; Sundaram, Mani ; Maker, Paul D. ; Muller, Richard E. ; Shott, Craig A. ; Carralejo, Ronald

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

45

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1890

Lastpage

1895

Abstract

A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature

Keywords

III-V semiconductors; aluminium compounds; cameras; focal planes; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; 300 K; 9 micron; GaAs-AlGaAs; GaAs/AlGaAs quantum well; IR imaging; MQW structure; bias voltage; charge handling capacity; f/2 optics; focal plane array sensitivity; indoor imaging; infrared photodetector; long-wavelength IR detector; multiplexer; operating temperature; outdoor imaging; read noise; snap-shot camera; Cameras; Dark current; Gallium arsenide; Infrared imaging; Laboratories; Optical imaging; Optical noise; Photodetectors; Propulsion; Space technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.711352

Filename

711352