Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor

Author

Majkusiak, Bogdan

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland

Volume

45

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1903

Lastpage

1911

Abstract

Current-voltage (I-V) characteristics of the metal-insulator-semiconductor-insulator-metal (MISIM) tunnel transistor in the common base and common emitter configurations are studied experimentally and theoretically. The Al-SiO₂-Si(n)-SiO₂-Al transistors with oxide layers of about 2.5 nm thickness have been manufactured. The devices exhibit current gain above 30 in the common base configuration and switching in the common emitter configuration. A theoretical static model of the MISIM tunnel transistor has been developed and applied to analyze the measured I-V characteristics for both operation configurations. Excellent fit of the model to the experimental data has been achieved. Influence of oxide thickness and interface trap density on the switching voltage has been investigated theoretically

Keywords

MIS devices; aluminium; bipolar transistors; elemental semiconductors; semiconductor device models; silicon; silicon compounds; tunnel transistors; tunnelling; 2.5 nm; Al-SiO₂-Si-SiO₂-Al; Al/SiO₂/n-Si/SiO₂/Al transistors; I-V characteristics; MISIM tunnel transistor; MOS technology; common base configuration; common emitter configuration; current gain; current-voltage characteristics; interface trap density; oxide layers; oxide thickness; switching voltage; theoretical static model; Bipolar transistors; Electrodes; Electrons; MOS devices; MOSFETs; Metal-insulator structures; Semiconductor diodes; Substrates; Switches; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.711354

Filename

711354