DocumentCode :
1423338
Title :
Bayesian Analysis of Hazard Rate, Change Point, and Cost-Optimal Burn-In Time for Electronic Devices
Author :
Yuan, Tao ; Kuo, Yue
Author_Institution :
Dept. of Ind. & Syst. Eng., Ohio Univ., Athens, OH, USA
Volume :
59
Issue :
1
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
132
Lastpage :
138
Abstract :
This study develops a full Bayesian approach to analysing hazard rate, change point, and cost-optimal burn-in time for electronic devices. The Weibull-exponential distribution is used to model the L-shaped hazard rate function that is commonly observed for electronic devices. The optimal burn-in time is selected to minimize the prior or posterior total expected costs, which explicitly consider the uncertainties on all the model parameters. The proposed approach is illustrated using an experimental data set consisting of failure times of a nano-scale high-k gate dielectric film.
Keywords :
MOS capacitors; Weibull distribution; belief networks; hafnium; high-k dielectric thin films; tantalum compounds; L-shaped hazard rate function; TaO2:Hf; Weibull-exponential distribution; change point; cost-optimal burn-in time; electronic devices; failure times; full Bayesian approach; metal-oxide-semiconductor capacitors; nanoscale high-k gate dielectric film; Bayesian analysis; Weibull-exponential distribution; change point; optimal burn-in; time-dependent dielectric breakdown;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/TR.2010.2040776
Filename :
5418926
Link To Document :
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