The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology

Author

Park, Min ; Lee, Seonghearn ; Kim, Cheon Soo ; Yu, Hyun Kyu ; Nam, Kee Soo

Author_Institution

Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

45

Issue

9

fYear

1998

fDate

9/1/1998 12:00:00 AM

Firstpage

1953

Lastpage

1959

Abstract

We present the extensive experimental results and their detailed analysis showing the important effects of layout parameters on the frequency responses of quality factor (Q) of rectangular spiral inductors, which are fabricated on a silicon substrate by using conventional silicon CMOS technology, in order to determine the desirable values of layout parameters for designing the high Q inductors used in RF IC´s applications. Analysis of the inductors on Si substrates with three kinds of resistivities has been performed by tailoring the geometric layout and varying the metal thickness. Using these results, the substrate effects on RF performance of inductors are also investigated by observing the frequency responses of Q with varying the substrate resistivity in detail

Keywords

CMOS integrated circuits; Q-factor; field effect MMIC; inductors; CMOS technology; RF IC; Si; frequency response; layout parameters; microwave spiral inductor; quality factor; resistivity; silicon substrate; Application specific integrated circuits; CMOS integrated circuits; CMOS technology; Conductivity; Inductors; Integrated circuit layout; Q factor; Radio frequency; Silicon; Spirals;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.711361

Filename

711361