Title :
The effects of high doping on the I-V characteristics of a thin-film SOI MOSFET
Author :
Jurczak, Malgorzata ; Jakubowski, Andrzej ; Lukasiak, Lidia
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
fDate :
9/1/1998 12:00:00 AM
Abstract :
Modifications of the Ortiz-Conde et al., model which take into account either apparent or physical bandgap narrowing have been presented. The influence of high doping effects is investigated by means of a comparison of the modified models with their original, version for various device parameters. It is shown that the inclusion of bandgap narrowing is essential for accurate simulation of I-V characteristics of a SOI MOSFET in the subthreshold and near-threshold regions. A new analytical model with bandgap narrowing has been derived for the subthreshold region
Keywords :
MOSFET; energy gap; semiconductor device models; semiconductor doping; silicon-on-insulator; I-V characteristics; Ortiz-Conde model; bandgap narrowing; device parameters; doping; near-threshold region; subthreshold region; thin-film SOI MOSFET; Capacitance; Doping; Electrons; MOSFET circuits; Photonic band gap; Semiconductor films; Semiconductor process modeling; Silicon; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
