Title :
Correlation between current-voltage and capacitance-voltage characteristics of Schottky barrier diodes
Author :
Zhu, Yu. ; Ishimaru, Yoshiteru ; Takahashi, Naoki ; Shimizu, Masafumi
Author_Institution :
Central Res. Labs., Sharp Corp., Nara, Japan
fDate :
9/1/1998 12:00:00 AM
Abstract :
A correlation between the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of Schottky barrier diodes (SBDs) is revealed and claimed to be a general property of SBDs for the first time. Analytical expressions explaining the correlation based on the electric field dependence of the Schottky barrier height are derived, yielding novel approaches to evaluate Schottky barrier height lowering and to model the device behaviors
Keywords :
Schottky diodes; capacitance; electric field effects; semiconductor device models; C-V characteristics; I-V characteristics; Schottky barrier diodes; Schottky barrier height; barrier height lowering; capacitance-voltage characteristics; current-voltage characteristics; electric field dependence; model; Capacitance measurement; Capacitance-voltage characteristics; Epitaxial layers; Indium phosphide; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor process modeling; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
