Title :
A novel thin film transistor using double amorphous silicon active layer
Author :
Choi, Jong Hyun ; Kim, Chang Soo ; Lim, Byung Cheon ; Jang, Jin
Author_Institution :
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
fDate :
9/1/1998 12:00:00 AM
Abstract :
We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT
Keywords :
amorphous semiconductors; elemental semiconductors; leakage currents; silicon; thin film transistors; Si:H,Cl-Si:H; double amorphous silicon stacked active layer; off-state photo-leakage current; thin film transistor; Amorphous silicon; Helium; Large screen displays; Leakage current; Lighting; Liquid crystal displays; Photoconductivity; Plasma chemistry; Plasma temperature; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
