Title :
A high-performance SOI drive-in gate controlled hybrid transistor (DGCHT)
Author :
Huang, Ru ; Zhang, Xing ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
9/1/1998 12:00:00 AM
Abstract :
A novel SOI drive-in gate controlled hybrid transistor is put forward in this paper. Compared with previous hybrid transistors, with the former advantages retained, drive-in gate controlled hybrid transistor (DGCHT) can obtain short channel without any submicron technology. And the Early voltage can be increased in spite of the depleted base surface. The breakdown characteristics can be improved in spite of the shorter channel length and the high current gain
Keywords :
silicon-on-insulator; transistors; DGCHT; Early voltage; SOI drive-in gate controlled hybrid transistor; breakdown characteristics; channel length; current gain; Annealing; Boron; CMOS process; CMOS technology; Electric breakdown; Etching; Immune system; MOSFETs; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
