DocumentCode
1423488
Title
A high-performance SOI drive-in gate controlled hybrid transistor (DGCHT)
Author
Huang, Ru ; Zhang, Xing ; Wang, Yangyuan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
45
Issue
9
fYear
1998
fDate
9/1/1998 12:00:00 AM
Firstpage
2079
Lastpage
2081
Abstract
A novel SOI drive-in gate controlled hybrid transistor is put forward in this paper. Compared with previous hybrid transistors, with the former advantages retained, drive-in gate controlled hybrid transistor (DGCHT) can obtain short channel without any submicron technology. And the Early voltage can be increased in spite of the depleted base surface. The breakdown characteristics can be improved in spite of the shorter channel length and the high current gain
Keywords
silicon-on-insulator; transistors; DGCHT; Early voltage; SOI drive-in gate controlled hybrid transistor; breakdown characteristics; channel length; current gain; Annealing; Boron; CMOS process; CMOS technology; Electric breakdown; Etching; Immune system; MOSFETs; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.711379
Filename
711379
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