Title :
Influence of Al mole fraction on the noise performance of GaAs/Al xGa1-xAs HEMT´s
Author :
Mateos, Javier ; Purdo, D. ; Gonzilez, T. ; Takyszak, P. ; Danneville, Francois ; Cappy, Alain
Author_Institution :
Dept. de Fisica Aplicada, Salamanca Univ., Spain
fDate :
9/1/1998 12:00:00 AM
Abstract :
By using a Monte Carlo particle simulation, the influence of the Al mole fraction on the intrinsic noise properties of GaAs/GaAs HEMT´s is analyzed. P, R, and C noise parameters and the minimum intrinsic noise figure are calculated. The results reveal that the decrease of the energy barrier at the heterojunction as the Al mole fraction is reduced (which leads to a closer approach of the electrons to the gate electrode) makes the noise associated to this electrode increase, consequently degrading the noise performance of the device
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor device noise; Al mole fraction; GaAs-AlGaAs; GaAs/AlxGa1-xAs HEMT; Monte Carlo particle simulation; gate electrode; heterojunction energy barrier; minimum intrinsic noise figure; noise parameters; Acoustical engineering; Analytical models; Electrodes; Energy barrier; Gallium arsenide; HEMTs; Monte Carlo methods; Noise figure; Noise reduction; Performance analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
