• DocumentCode
    1423494
  • Title

    Influence of Al mole fraction on the noise performance of GaAs/Al xGa1-xAs HEMT´s

  • Author

    Mateos, Javier ; Purdo, D. ; Gonzilez, T. ; Takyszak, P. ; Danneville, Francois ; Cappy, Alain

  • Author_Institution
    Dept. de Fisica Aplicada, Salamanca Univ., Spain
  • Volume
    45
  • Issue
    9
  • fYear
    1998
  • fDate
    9/1/1998 12:00:00 AM
  • Firstpage
    2081
  • Lastpage
    2083
  • Abstract
    By using a Monte Carlo particle simulation, the influence of the Al mole fraction on the intrinsic noise properties of GaAs/GaAs HEMT´s is analyzed. P, R, and C noise parameters and the minimum intrinsic noise figure are calculated. The results reveal that the decrease of the energy barrier at the heterojunction as the Al mole fraction is reduced (which leads to a closer approach of the electrons to the gate electrode) makes the noise associated to this electrode increase, consequently degrading the noise performance of the device
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor device noise; Al mole fraction; GaAs-AlGaAs; GaAs/AlxGa1-xAs HEMT; Monte Carlo particle simulation; gate electrode; heterojunction energy barrier; minimum intrinsic noise figure; noise parameters; Acoustical engineering; Analytical models; Electrodes; Energy barrier; Gallium arsenide; HEMTs; Monte Carlo methods; Noise figure; Noise reduction; Performance analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.711380
  • Filename
    711380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1423494