Title :
Optically induced sidegating current isolation of GaAs MESFET by multiquantum barrier
Author_Institution :
Inst. of Opt. Sci., Nat. Central Univ., Chung-Li, Taiwan
fDate :
9/1/1998 12:00:00 AM
Abstract :
The multiquantum barrier buffer layer in GaAs MESFET configuration exhibits great reduction on the optically induced sidegating current. The electrical and optically induced sidegating current suppressions of enhanced potential barrier height achieved with multiquantum barrier buffer layer are clearly demonstrated
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; isolation technology; GaAs; GaAs MESFET; multiquantum barrier buffer layer; optically induced sidegating current isolation; potential barrier height; Acoustical engineering; Circuit noise; FETs; Gallium arsenide; HEMTs; MESFETs; Noise figure; Optical buffering; Optical noise; Semiconductor device noise;
Journal_Title :
Electron Devices, IEEE Transactions on
