DocumentCode
1423552
Title
A unified MOSFET channel charge model for device modeling in circuit simulation
Author
Cheng, Yuhua ; Chen, Kai ; Imai, Kiyotoka ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
17
Issue
8
fYear
1998
fDate
8/1/1998 12:00:00 AM
Firstpage
641
Lastpage
644
Abstract
In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarantee good continuities and smooth transitions of charge, capacitance, current, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental data well at various process and bias conditions from subthreshold and strong inversion, including the moderate inversion region of growing importance for low-voltage/power circuits
Keywords
MOSFET; semiconductor device models; MOSFET channel charge model; circuit simulation; device modeling; low-voltage low-power circuit; Capacitance; Circuit simulation; Differential equations; Doping; Helium; MOSFET circuits; Semiconductor process modeling; Threshold voltage; Transconductance; Very large scale integration;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.712096
Filename
712096
Link To Document