DocumentCode
1423611
Title
High-Q poly-to-poly capacitor for RF integrated circuits
Author
Lee, Sang-Gug ; Lee, Jin-Taek ; Choi, Jeong-Ki
Author_Institution
Sch. of Eng., Information & Commun. Univ., Daejeon, South Korea
Volume
37
Issue
1
fYear
2001
fDate
1/4/2001 12:00:00 AM
Firstpage
25
Lastpage
26
Abstract
A very high-Q poly-to-poly capacitor structure is proposed and measurement results are presented. The poly-to-poly capacitor is designed using a conventional 0.35 μm CMOS process. By optimising the design a Q-factor of >120 is obtained at 2 GHz
Keywords
CMOS integrated circuits; Q-factor; UHF integrated circuits; capacitors; circuit optimisation; integrated circuit layout; integrated circuit measurement; low-power electronics; 0.35 micron; 2 GHz; CMOS process; Q-factor; RF integrated circuits; high-Q capacitor structure; poly-to-poly capacitor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010016
Filename
894343
Link To Document