Title :
High-power and highly reliable 780 nm band AlGaAs laser diodes with rectangular ridge structure
Author :
Hiroyama, R. ; Nomura, Y. ; Furusawa, Kazuya ; Okamoto, S. ; Hayashi, N. ; Shono, M. ; Sawada, M.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
fDate :
1/4/2001 12:00:00 AM
Abstract :
A record light output power of 240 mW has been achieved for the 780 nm band AlGaAs laser diodes by using a rectangular ridge structure. The laser diodes have been operated for >1000 h at 60°C under 150 mW pulsed operation
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser reliability; ridge waveguides; semiconductor device reliability; semiconductor lasers; waveguide lasers; 1000 h; 150 mW; 240 mW; 60 C; 780 nm; AlGaAs; AlGaAs laser diodes; high-power laser diodes; highly reliable laser diodes; laser diodes; light output power; pulsed operation; rectangular ridge structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010020
