Vertical-cavity surface-emitting laser monolithically integrated with intracavity monitor diode with temperature-insensitive responsivity

Author

Steinle, G. ; Wolf, H.D. ; Popp, M. ; Ebeling, K.-J.

Author_Institution

Infineon AG, Munich, Germany

Volume

37

Issue

1

fYear

2001

fDate

1/4/2001 12:00:00 AM

Firstpage

34

Lastpage

36

Abstract

An intracavity monitor diode with QW-absorber is integrated within the bottom Bragg reflector of an 850 nm VCSEL. Temperature-insensitive responsivities are obtained by adopting a suitable QW design for the absorber. The thermal dependence of the remaining photocurrent offset due to spontaneous emission can be minimised by a proper choice of laser detuning and position of the absorber QW inside the Bragg reflector

Keywords

MOCVD; integrated optics; laser beams; laser cavity resonators; laser mirrors; laser tuning; optical fabrication; photoemission; quantum well lasers; semiconductor lasers; spontaneous emission; surface emitting lasers; vapour phase epitaxial growth; 850 nm; Bragg reflector; VCSEL; absorber; absorber quantum well; bottom Bragg reflector; intracavity monitor diode; laser detuning; monolithic integration; photocurrent offset; quantum well absorber; quantum well design; quantum well position; spontaneous emission; temperature-insensitive responsivities; temperature-insensitive responsivity; thermal dependence; vertical-cavity surface-emitting laser;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010019

Filename

894349