• DocumentCode
    1423654
  • Title

    Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology

  • Author

    Hackl, S. ; Meister, T.F. ; Wurzer, M. ; Knapp, H. ; Aufinger, K. ; Treitinger, L. ; Scholtz, A.L.

  • Author_Institution
    Infineon Technols. AG, Munich, Germany
  • Volume
    37
  • Issue
    1
  • fYear
    2001
  • fDate
    1/4/2001 12:00:00 AM
  • Firstpage
    36
  • Lastpage
    37
  • Abstract
    A monolithically integrated active broadband mixer for wireless communications in a 0.5 μm 80 GHz fT SiGe bipolar technology is presented. The circuit is optimised for low-noise and low-power consumption and operates up to 20 GHz with a conversion gain >10 dB consuming only 9 mW from a single 4.5 V supply
  • Keywords
    Ge-Si alloys; MMIC mixers; bipolar MMIC; integrated circuit noise; low-power electronics; semiconductor materials; 0.5 micron; 10 dB; 20 GHz; 4.5 V; 80 GHz; 9 mW; MMIC; SHF; SiGe; SiGe technology; broadband mixer; low-noise bipolar mixer; low-power consumption; monolithically integrated active mixer; wireless communications application;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010034
  • Filename
    894350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1423654