DocumentCode :
1423654
Title :
Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology
Author :
Hackl, S. ; Meister, T.F. ; Wurzer, M. ; Knapp, H. ; Aufinger, K. ; Treitinger, L. ; Scholtz, A.L.
Author_Institution :
Infineon Technols. AG, Munich, Germany
Volume :
37
Issue :
1
fYear :
2001
fDate :
1/4/2001 12:00:00 AM
Firstpage :
36
Lastpage :
37
Abstract :
A monolithically integrated active broadband mixer for wireless communications in a 0.5 μm 80 GHz fT SiGe bipolar technology is presented. The circuit is optimised for low-noise and low-power consumption and operates up to 20 GHz with a conversion gain >10 dB consuming only 9 mW from a single 4.5 V supply
Keywords :
Ge-Si alloys; MMIC mixers; bipolar MMIC; integrated circuit noise; low-power electronics; semiconductor materials; 0.5 micron; 10 dB; 20 GHz; 4.5 V; 80 GHz; 9 mW; MMIC; SHF; SiGe; SiGe technology; broadband mixer; low-noise bipolar mixer; low-power consumption; monolithically integrated active mixer; wireless communications application;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010034
Filename :
894350
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1423654
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