Title :
Interband Mid-IR Semiconductor Lasers
Author_Institution :
Dept. of Electr. Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA
fDate :
4/1/2010 12:00:00 AM
Abstract :
Significant advances in the room-temperature (RT) continuous-wave (CW) output power of both type-l quantum-well (QW) active-layer lasers and interband cascade lasers have been reported within the 3-4-??m wavelength region in 2009. Recent developments on the growth of highly strained QWs and low-defect-density lattice-mismatched materials also demonstrate potential for realizing high-performance mid-infrared (IR) lasers on conventional substrates such as Si, GaAs, and inP.
Keywords :
quantum well lasers; interband cascade lasers; interband mid-IR semiconductor lasers; quantum-well active-layer lasers; room-temperature continuous-wave output power; Gallium arsenide; Optical materials; Photonics; Power generation; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Substrates; Semiconductor lasers; mid-infrared lasers;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2010.2043727
