Title :
Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers
Author :
Larson, Michael C. ; Kondow, M. ; Kitatani, Takeshi ; Tamura, Keiichi ; Okai, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We report room-temperature (RT) continuous-wave (CW) photopumped operation of long-wavelength vertical-cavity surface-emitting lasers (VCSELs) employing a Ga/sub 0.7/In/sub 0.3/N/sub 0.007/As/sub 0.993/-GaAs multiple-quantum-well (MQW) active layer grown directly on a GaAs-AlAs distributed Bragg reflector (DBR). Evidence for laser oscillation includes spectral linewidth narrowing, clamping of spontaneous emission, and a distinct increase in slope efficiency at threshold. By taking advantage of lateral growth rate nonuniformity, we obtained laser emission over an extremely broad 110-nm wavelength range, from 1.146-1.256 μm. Equivalent threshold current density over this range was estimated at 3.3-10 kA/cm2.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical pumping; quantum well lasers; spontaneous emission; surface emitting lasers; 1.146 to 1.256 mum; 1.25 mum; CW photopumped operation; DBR; Ga/sub 0.7/In/sub 0.3/N/sub 0.007/As/sub 0.993/-GaAs; GaAs-AlAs distributed Bragg reflector; GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers; VCSEL; active layer; continuous-wave; laser emission; laser oscillation; lateral growth rate nonuniformity; photopumped lasing; room-temperature; slope efficiency; spectral linewidth narrowing; spontaneous emission clamping; threshold current density; Distributed Bragg reflectors; Fiber lasers; Mirrors; Optical surface waves; Quantum well devices; Resonance; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
