• DocumentCode
    1423746
  • Title

    Electro-thermal resonance in MOSFET devices

  • Author

    Codecasa, L. ; D´Amore, D. ; Maffezzoni, P.

  • Author_Institution
    Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
  • Volume
    37
  • Issue
    1
  • fYear
    2001
  • fDate
    1/4/2001 12:00:00 AM
  • Firstpage
    57
  • Lastpage
    58
  • Abstract
    Previously presented work on electro-thermal interaction in silicon devices is extended. It is shown that an electro-thermal resonance oscillation can be induced in a MOSFET device, allowing an easy evaluation of thermal parameters
  • Keywords
    MOSFET; elemental semiconductors; equivalent circuits; resonance; semiconductor device models; silicon; thermal analysis; MOSFET devices; Si; Si MOSFETs; electro-thermal resonance; resonance oscillation; thermal parameters evaluation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010045
  • Filename
    894364