DocumentCode :
1423749
Title :
Highly Efficient Saturated Power Amplifier
Author :
Moon, Junghwan ; Lee, Juyeon ; Pengelly, Raymond S. ; Baker, Ryan ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Volume :
13
Issue :
1
fYear :
2012
Firstpage :
125
Lastpage :
131
Abstract :
In this article, a high-efficiency saturated amplifier has been presented. This amplifier takes advantage of the nonlinear output capacitor to shape the voltage waveform. The nonlinear capacitor generates substantial second harmonic voltage with small higher order harmonics. Thus, using √2 times larger fundamental load and the proper second harmonic termination, the resultant voltage waveform can be half-sinusoidal. For high efficiency, the PA should be driven by the large input power. Therefore, the current of the PA is bifurcated, resulting in the quasirectangular current shape. The resultant output waveforms are similar to those of class-F1 amplifiers, whose waveforms are optimal for high efficiencies. Based on harmonic source/ load-pull simulation, the saturated amplifier has been designed using Cree´s GaN HEMT CGH40006P packaged model. The matching networks for the input and output were optimized using the Momentum simulator. The implemented amplifier delivered a PAE of 80.1% at 3.475 GHz. The simulation and measurement results verify that the saturated amplifier is suitable for a high-efficiency PA over a relatively high frequency band.
Keywords :
HEMT integrated circuits; power amplifiers; GaN HEMT CGH40006P packaged model; PAE; class-F1 amplifiers; efficiency 80.1 percent; frequency 3.475 GHz; harmonic source/ load-pull simulation; highly efficient saturated PA; highly efficient saturated power amplifier; momentum simulator; nonlinear output capacitor; power-added-efficiency; quasirectangular current shape; resultant voltage waveform; second harmonic termination; voltage waveform; Capacitors; HEMTs; Harmonic analysis; Load modeling; Power amplifiers; Power generation;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2011.2174014
Filename :
6132299
Link To Document :
بازگشت