Title :
InGaN–GaN Disk Laser for Blue-Violet Emission Wavelengths
Author :
Debusmann, Ralph ; Dhidah, Nacef ; Hoffmann, Veit ; Weixelbaum, Leonhard ; Brauch, U. ; Graf, T. ; Weyers, M. ; Kneissl, M.
Author_Institution :
Inst. of Solid-State Phys., Tech. Univ. of Berlin, Berlin, Germany
fDate :
5/1/2010 12:00:00 AM
Abstract :
An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300 W, the slope efficiency 3.5%, and the threshold pump power density 700 kW/cm2. Critical parameters in the design of the laser will be discussed and ways to improve the performance will be suggested.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pumping; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; InGaN-GaN; blue-violet emission wavelengths; disk laser; optically pumped surface-emitting laser; power 300 W; threshold pump power density; wavelength 393 nm; Gallium compounds; indium compounds; nitrogen compounds; optical pumping; quantum-well (QW) lasers; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2043668
