Abstract :
High dark reverse currents in (n+)ITO/(p)c-Si junctions strongly affect the performance of high-speed, UV-enhanced photodiodes. The transport mechanism involved and the role of interface defects are investigated. Deleterious effects can be minimised by the introduction of a thin a-Si:H layer, mainly due to the effusion and passivating action of the trapped hydrogen
Keywords :
dark conductivity; elemental semiconductors; indium compounds; p-n heterojunctions; passivation; photodiodes; silicon; tin compounds; ITO-Si; InSnO-Si; UV-enhanced photodiodes; anisotype heterojunctions; dark reverse currents; effusion; interface defects; passivating action; reverse current characteristic; transport mechanism;
