DocumentCode :
1423937
Title :
High-speed lightwave communication ICs based on III-V compound semiconductors
Author :
Sano, Eiichi
Author_Institution :
NTT Photonics Labs
Volume :
39
Issue :
1
fYear :
2001
fDate :
1/1/2001 12:00:00 AM
Firstpage :
154
Lastpage :
158
Abstract :
Ultra-high-speed ICs are one of the keys to achieving large-capacity lightwave communications systems. This article reviews advances in lightwave communication ICs based on III-V compound semiconductors developed to obtain next-generation 40-Gb/s/wavelength channel systems
Keywords :
III-V semiconductors; high-speed optical techniques; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; 40 Gbit/s; III-V compound semiconductors; high-speed lightwave communication IC; large-capacity lightwave communications systems; Bit rate; Circuits; Erbium-doped fiber amplifier; HEMTs; III-V semiconductor materials; MODFETs; Optical receivers; Optical transmitters; Time division multiplexing; Wavelength division multiplexing;
fLanguage :
English
Journal_Title :
Communications Magazine, IEEE
Publisher :
ieee
ISSN :
0163-6804
Type :
jour
DOI :
10.1109/35.894390
Filename :
894390
Link To Document :
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