DocumentCode :
1423991
Title :
Correlation Between the 
Adjustment of nMOSFETs With HfSiO Gate Oxide and the Energy Profile of the Bulk Trap Density
Author :
Sahhaf, S. ; Degraeve, R. ; Srividya, V. ; Kaczer, B. ; Gealy, D. ; Horiguchi, N. ; Togo, M. ; Hoffmann, T.Y. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
31
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
272
Lastpage :
274
Abstract :
The change of the energy profile of the initially present HfSiO defects in nMOSFETs after Vth adjustment by As and Ar implantations is investigated. A fundamental correlation between the density of energetically deep traps and the initial Vth is revealed, suggesting that the negative bulk charge in HfSiO controls the Vth.
Keywords :
MOSFET; argon; arsenic; hafnium compounds; silicon compounds; HfSiO; argon implantation; arsenic implantation; bulk trap density; deep traps; energy profile; gate oxide; metal-oxide-semiconductor field effect transistors; nMOSFET; threshold voltage; As and Ar implantations; initial $V_{rm th}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2040063
Filename :
5419082
Link To Document :
