DocumentCode
1423997
Title
Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser
Author
Baiano, Alessandro ; Ishihara, Ryoichi ; van der Cingel, Johan ; Beenakker, Kees
Author_Institution
Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands
Volume
31
Issue
4
fYear
2010
fDate
4/1/2010 12:00:00 AM
Firstpage
308
Lastpage
310
Abstract
We have investigated the carrier mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors by the ??-Czochralski process at a low-temperature process (< 350??C). The high laser energy density near the ablation phenomenon that completely melts the grain filter during the crystallization is responsible for the high tensile strain of the silicon grains, which leads to carrier mobility enhancement.
Keywords
carrier mobility; crystal growth from melt; crystallisation; excimer lasers; silicon; thin film transistors; ??-Czochralski process; ablation phenomenon; carrier mobility enhancement; crystallization; excimer laser; grain filter; laser energy density; strained single-grain silicon n-channel; strained single-grain silicon p-channel; tensile strain; thin-film transistors; Crystal growth; excimer laser; laser annealing; single-grain silicon thin-film transistors (SG-TFTs); tensile strain;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2040131
Filename
5419083
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