Title :
Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser
Author :
Baiano, Alessandro ; Ishihara, Ryoichi ; van der Cingel, Johan ; Beenakker, Kees
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron., Delft Univ. of Technol., Delft, Netherlands
fDate :
4/1/2010 12:00:00 AM
Abstract :
We have investigated the carrier mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors by the ??-Czochralski process at a low-temperature process (< 350??C). The high laser energy density near the ablation phenomenon that completely melts the grain filter during the crystallization is responsible for the high tensile strain of the silicon grains, which leads to carrier mobility enhancement.
Keywords :
carrier mobility; crystal growth from melt; crystallisation; excimer lasers; silicon; thin film transistors; ??-Czochralski process; ablation phenomenon; carrier mobility enhancement; crystallization; excimer laser; grain filter; laser energy density; strained single-grain silicon n-channel; strained single-grain silicon p-channel; tensile strain; thin-film transistors; Crystal growth; excimer laser; laser annealing; single-grain silicon thin-film transistors (SG-TFTs); tensile strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2040131
