DocumentCode
1424041
Title
A Low-Voltage Torsion Nanorelay
Author
Rubin, Joshua ; Sundararaman, Ravishankar ; Kim, Moonkyung ; Tiwari, Sandip
Author_Institution
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Volume
32
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
414
Lastpage
416
Abstract
We demonstrate the use of torsion in nanorelays to achieve low voltages, high speeds, single-lithography-step construction, and a form useful for configurability and electronic design enhancements in 3-D integrated implementations. The combined bending and torsion of self-aligned nanopillars facilitates the first top-down fabricated vertical three-terminal nanoscale relay. Experimental devices, even at 500-nm features, operate at ~10 V and 1-3 μs. Scaling to 45 nm suggests operation at approximately 1 V.
Keywords
low-power electronics; nanoelectromechanical devices; torsion; 3D integrated implementations; bending; low-voltage torsion nanorelay; self-aligned nanopillars; size 45 nm; 3-D integration; Microelectromechanical systems (MEMS); nanoelectromechanical systems (NEMS); nanopillar; relay; torsion;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2099199
Filename
5685799
Link To Document