Title :
High-Performance Implanted-Channel SiC MESFETs
Author :
Sriram, Saptharishi ; Suvorov, Alexander V. ; Henning, Jason H. ; Namishia, Daniel J. ; Hagleitner, Helmut ; Fisher, Jeremy K. ; Smith, Thomas J. ; Alcorn, Terry S. ; Pulz, William T.
Author_Institution :
Cree, Inc., Durham, NC, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
We demonstrate for the first time the development of state-of-the-art ion-implanted-channel SiC MESFETs with record dc and RF performance that is comparable to that of epitaxial-channel devices. MESFETs fabricated with this approach show a maximum stable gain exceeding 15.8 dB at 3.1 GHz in class-AB bias condition. An RF power output that is greater than 4 W/mm, with 63% drain efficiency, at 3.5 GHz was also achieved, showing the potential of these devices for high-power operation.
Keywords :
Schottky gate field effect transistors; epitaxial growth; ion implantation; RF power output; SiC; class-AB bias condition; drain efficiency; epitaxial-channel devices; high-performance implanted-channel SiC MESFET; high-power operation; ion-implanted-channel SiC MESFET; maximum stable gain; Ion implantation; MESFETs; SiC; source-connected field plates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2095824
