DocumentCode :
1424099
Title :
Effects of electron prebunching on the radiation growth rate of a collective (Raman) free-electron laser amplifier
Author :
Leibovitch, Chaim ; Xu, Kongyi ; Bekefi, George
Author_Institution :
Dept. of Phys., MIT, Cambridge, MA, USA
Volume :
24
Issue :
9
fYear :
1988
Firstpage :
1825
Lastpage :
1828
Abstract :
Experiments are reported on the effects of electron prebunching in a mildly relativistic, low-current (200-KV, 1-A) free-electron laser amplifier operating in the collective (Raman) regime at a frequency of approximately 10 GHz. Prebunching is established by injecting an electromagnetic wave into a bifilar helical wiggler and then transporting the bunched beam into a second magnetic wiggler region. The wave growth rate is deduced from measurements of the radiation intensity as a function of interaction length. Observations show that prebunching can increase the radiation growth rate manyfold as compared with a system without prebunching. Studies are presented both in the small-signal (linear) regime, and in the nonlinear (saturated) regime.<>
Keywords :
Raman lasers; electron beams; free electron lasers; 1.0 A; 10 GHz; 200 KV; Raman laser; bifilar helical wiggler; electron prebunching; free-electron laser amplifier; magnetic wiggler; radiation growth rate; radiation intensity; Electron beams; Free electron lasers; Klystrons; Laboratories; Laser beams; Nonlinear optics; Optical saturation; Physics; Stimulated emission; Undulators;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.7122
Filename :
7122
Link To Document :
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