Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Author

Yang, Ya-Hui ; Yang, Sidney S. ; Kao, Chen-Yen ; Chou, Kan-San

Author_Institution

Inst. of Photonics Technol., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

31

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

329

Lastpage

331

Abstract

We have fabricated a bottom-gate thin-film transistor (TFT) with the active layer of indium-gallium-zinc-oxide (IGZO) nanoparticles prepared from water solution. Polycrystallized InGaZn₂O₅ films were formed by a spin-coating method and postbaked at low temperature (95??C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but also the cross section of the film appears dense, considering that the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (> 10⁵ A), and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm²/V ?? s and ON-OFF current ratio over 106 are very promising for TFT applications.

Keywords

electronic equipment manufacture; nanoparticles; spin coating; thin film transistors; Ga; In; O; TFT device; Zn; bottom-gate thin-film transistor; chemical properties; drain current; electrical properties; field-effect mobility; indium-gallium-zinc-oxide nanoparticles; low-temperature solution-processed thin-film transistors; spin-coating method; switching ability; threshold voltage; Indium–gallium–zinc oxide (IGZO); metal–insulator–oxide–semiconductor devices; solution-processed; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2041425

Filename

5419109