• DocumentCode
    1424718
  • Title

    Burn-in effect on yield

  • Author

    Kim, Taeho ; Kuo, Way ; Chien, Wei-Ting Kary

  • Author_Institution
    Planning & Coordination Office, Korea Telecom, Kyonggi, South Korea
  • Volume
    23
  • Issue
    4
  • fYear
    2000
  • fDate
    10/1/2000 12:00:00 AM
  • Firstpage
    293
  • Lastpage
    299
  • Abstract
    By removing infant mortalities, burn-in of semiconductor devices improves reliability. However, burn-in may affect the yield of semiconductor devices since defects grow during burn-in and some of them end up with yield loss. The amount of yield loss depends upon burn-in environments. Another burn-in effect is the yield gain. Since yield is a function of defect density, if some defects are detected and removed during burn-in, the yield of the post-burn-in process can be expected to increase. The amount of yield gain depends upon the number of defects removed during burn-in. In this paper we present yield loss and gain expressions and relate them with the reliability projection of semiconductor devices in order to determine burn-in time
  • Keywords
    environmental stress screening; integrated circuit reliability; integrated circuit yield; IC manufacture; burn-in effect; burn-in environment dependence; burn-in time; defect density; defect growth; infant mortalities removal; reliability; semiconductor device yield; yield gain; yield loss; Breakdown voltage; Circuits; Complexity theory; Inspection; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor devices; Stress; Temperature dependence; Testing;
  • fLanguage
    English
  • Journal_Title
    Electronics Packaging Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-334X
  • Type

    jour

  • DOI
    10.1109/6104.895074
  • Filename
    895074