DocumentCode
1424719
Title
Hebbian Learning in Spiking Neural Networks With Nanocrystalline Silicon TFTs and Memristive Synapses
Author
Cantley, Kurtis D. ; Subramaniam, Anand ; Stiegler, Harvey J. ; Chapman, Richard A. ; Vogel, Eric M.
Author_Institution
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Volume
10
Issue
5
fYear
2011
Firstpage
1066
Lastpage
1073
Abstract
Characteristics similar to biological neurons are demonstrated in SPICE simulations of spiking neuron circuits comprised of submicron nanocrystalline silicon (nc-Si) thin-film transistors (TFTs). Utilizing these neuron circuits and corresponding device models, the properties of a two-neuron network are explored. The synaptic connection consists of a single nc-Si TFT and a memristor whose conductance determines the synaptic weight. During correlated spiking of the pre- and postsynaptic neurons, the strength of the synaptic connection increases. Conversely, it is diminished when the spiking is uncorrelated. This synaptic plasticity and Hebbian learning are essential for performing useful computation and adaptation in large-scale artificial neural networks. The importance of the result is augmented by the fact that these properties are demonstrated using models based on measured data from devices with potential for 3-D integration into a nanoscale architecture with extremely high device density.
Keywords
Hebbian learning; elemental semiconductors; memristors; nanoelectronics; neural chips; neural nets; silicon; thin film transistors; 3D integration; Hebbian learning; SPICE simulations; Si; biological neurons; device models; large-scale artificial neural networks; memristive synapses; nanocrystalline silicon TFT; neuron circuits; synaptic plasticity; synaptic weight; thin-film transistors; Electric potential; Integrated circuit modeling; Memristors; Neurons; Silicon; Thin film transistors; Hebbian learning; memristor; nanocrystalline silicon; neuromorphic; thin-film transistors;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2011.2105887
Filename
5686944
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