DocumentCode
1424767
Title
Non-linear diffusion of minority carriers
Author
Amer, S.
Author_Institution
Standard Telephones and Cables Ltd., UK
Volume
110
Issue
4
fYear
1963
fDate
4/1/1963 12:00:00 AM
Firstpage
641
Lastpage
646
Abstract
A study of the non-linear diffusion of minority carriers has been carried out. Once the starting terms have been defined, i.e. the diffusion constant depends on carrier concentration according to Webster´s formula Dp=Dp0(1+P/P+Nd) an exact first integral is found, from which a study of the influence of bulk recombination on the current gain of a transistor is made. An expression for the base control charge is also found. Finally approximate formulae are derived showing the dependence of carrier concentration on distance. Results are valid for any injection level and distance. Rittner has studied the same problem when the lifetime of minority carriers is infinite. His results are not very different from the linear theory and do not provide a good description at distances larger than the diffusion length.
Keywords
semiconductor devices; transistors;
fLanguage
English
Journal_Title
Electrical Engineers, Proceedings of the Institution of
Publisher
iet
ISSN
0020-3270
Type
jour
DOI
10.1049/piee.1963.0087
Filename
5249771
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