• DocumentCode
    1424767
  • Title

    Non-linear diffusion of minority carriers

  • Author

    Amer, S.

  • Author_Institution
    Standard Telephones and Cables Ltd., UK
  • Volume
    110
  • Issue
    4
  • fYear
    1963
  • fDate
    4/1/1963 12:00:00 AM
  • Firstpage
    641
  • Lastpage
    646
  • Abstract
    A study of the non-linear diffusion of minority carriers has been carried out. Once the starting terms have been defined, i.e. the diffusion constant depends on carrier concentration according to Webster´s formula Dp=Dp0(1+P/P+Nd) an exact first integral is found, from which a study of the influence of bulk recombination on the current gain of a transistor is made. An expression for the base control charge is also found. Finally approximate formulae are derived showing the dependence of carrier concentration on distance. Results are valid for any injection level and distance. Rittner has studied the same problem when the lifetime of minority carriers is infinite. His results are not very different from the linear theory and do not provide a good description at distances larger than the diffusion length.
  • Keywords
    semiconductor devices; transistors;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineers, Proceedings of the Institution of
  • Publisher
    iet
  • ISSN
    0020-3270
  • Type

    jour

  • DOI
    10.1049/piee.1963.0087
  • Filename
    5249771