Hole Injection Type InGaAs–InP Near Infrared Photo-FET (HI-FET)

Author

Ogura, Mutsuo

Author_Institution

Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

Volume

46

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

562

Lastpage

569

Abstract

A hole injection type InGaAs-InP near infrared photo-FET (HI-FET) is realized in which a small charge sensing FET is vertically mounted on a planar zinc diffused p-i-n photodiode (PD) with a low dark current. A simulation and actual device performance confirm the operating principle that involves photo-generated holes in the PD part being injected into the FET channel and converted into an electron flow with the equivalent charge. A HI-FET with excellent sensitivity of the order of several tens of femtowatts and an addressing function is demonstrated for highly sensitive infrared imaging devices of the future.

Keywords

III-V semiconductors; dark conductivity; field effect transistors; gallium arsenide; indium compounds; infrared detectors; p-i-n photodiodes; photodetectors; phototransistors; FET channel; HI-FET; InGaAs-InP; dark current; hole injection; infrared imaging devices; near infrared photo-FET; photogenerated holes; planar zinc diffused p-i-n photodiode; small charge sensing FET; Charge carrier processes; Circuit noise; Dark current; FETs; Infrared detectors; Infrared spectra; PIN photodiodes; Phototransistors; Working environment noise; Zinc; FET; HPT; InGaAs; Zn diffusion; photodetector; phototransistor;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2009.2033130

Filename

5419244