Title :
Polarization-insensitive InP-based MQW digital optical switch
Author :
Sneh, A. ; Zucker, J.E. ; Miller, B.I. ; Stulz, L.W.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
A polarization-insensitive InP-based p-i-n multiple-quantum-well switch is demonstrated for the first time. Polarization-insensitive switching and loss are achieved. Crosstalk and loss measurements across a wavelength range of 20 nm centered at 1.55 μm are reported. A crosstalk of better than -13 dB is achieved for both TE and TM polarizations across the 1.54-1.56-μm wavelength range with a switching voltage of -7 V. A low on-chip loss of less than 3 dB is achieved for both TE and TM across the above wavelength range, with a compact switch structure which is 3 mm long.
Keywords :
III-V semiconductors; electro-optical switches; high-speed optical techniques; indium compounds; integrated optoelectronics; light polarisation; optical communication equipment; optical crosstalk; optical loss measurement; photonic switching systems; quantum confined Stark effect; semiconductor quantum wells; 1.54 to 1.56 mum; 1.55 mum; 3 dB; 3 mm; InP; InP-based MQW digital optical switch; TE polarizations; TM polarizations; compact switch structure; crosstalk; crosstalk measurements; loss; loss measurements; on-chip loss; p-i-n multiple-quantum-well switch; polarization-insensitive optical switch; polarization-insensitive switching; switching voltage; wavelength range; Crosstalk; Loss measurement; Optical losses; Optical polarization; Optical switches; PIN photodiodes; Quantum well devices; Tellurium; Voltage; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
