DocumentCode :
1425164
Title :
Effect of Distortion in a Vibrational Potential Surface on Transport Through a Molecular Transistor
Author :
Dong, Bing ; Lei, X.L. ; Horing, N. J M
Author_Institution :
Dept. of Phys., Shanghai Jiaotong Univ., Shanghai, China
Volume :
10
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
384
Lastpage :
390
Abstract :
We analyze the effect of a pure distortion of nuclear potential on nonequilibrium-vibration-assisted tunneling through a molecular quantum dot with a single level coupled to the vibrational mode. In this study, we employ rate equations to examine the current-voltage characteristics and zero-frequency shot noise. We find that distortion induces a strong negative differential conductance (NDC) and a giant Fano factor for an anionic molecule; while a weak NDC and a nearly Poissonian shot noise occur for a neutral molecule. We discuss, in detail, the reasons for these asymmetric transport properties.
Keywords :
carbon nanotubes; electric admittance; electron spin polarisation; molecular electronics; quantum dots; semiconductor device models; semiconductor device noise; shot noise; transistors; tunnelling; Poissonian shot noise; anionic molecule; current-voltage characteristics; giant Fano factor; molecular quantum dot; molecular transistor; negative differential conductance; neutral molecule; nonequilibrium vibration assisted tunneling; nuclear potential; vibrational potential surface; zero-frequency shot noise; Carbon nanotubes; Coupled mode analysis; Electrons; Nanotechnology; Oscillators; Physics; Poisson equations; Quantum dots; Tunneling; Vibrations; Giant Fano factor; negative differential conductance (NDC); vibration-assisted tunneling;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2009.2037354
Filename :
5419272
Link To Document :
بازگشت