MBE grown Npn AlGaAs/GaAs bipolar transistors with C p doping by electron cyclotron resonance source activated methane

Using an electron cyclotron resonance source in a UHV system, vacuum connected to an adjacent molecular beam epitaxy, carbon doping in GaAs was obtained and applied to the base of a heterojunction Npn bipolar transistor. The devices fabricated on the heterostructures grown as described exhibited current gains of about 50. After subjecting the layers to a 700 degrees C/20 minutes anneal cycle, the newly fabricated devices yielded current gains of about 50 demonstrating their stability.