Title :
Nitridation of silicon-dioxide films grown on 6H silicon carbide
Author :
Dimitrijev, Sima ; Li, Hui-feng ; Harrison, H.Barry ; Sweatman, Denis
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia
fDate :
5/1/1997 12:00:00 AM
Abstract :
This letter addresses the question of why it is possible to grow high-quality oxide films on N-type but not on P-type SiC. It provides results which indicate that the oxide/SiC interface would be inferior to the oxide/Si interface for both N-type and P-type SiC, if it were not for the beneficial effects of nitrogen incorporation. The letter presents, for the first time, results on nitridation of thermally grown oxides in NO and N/sub 2/O. The results demonstrate that the oxides grown on P-type can be improved by NO annealing, but not by N/sub 2/O annealing.
Keywords :
MOS capacitors; annealing; interface states; nitridation; silicon compounds; 6H SiC; MOS capacitors; N incorporation; N-type SiC; N/sub 2/O; N/sub 2/O annealing; NO; NO annealing; P-type SiC; SiC; SiO/sub 2/ films; SiO/sub 2/-SiC; SiON-SiC; high-quality oxide film growth; nitridation; oxide/SiC interface; thermally grown oxides; Aluminum; Annealing; Lead compounds; MOS capacitors; Nitrogen; Oxidation; Semiconductor films; Silicon carbide; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
