Title :
The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation
Author :
Lee, Kan-Yuan ; Fang, Yean-Kuen ; Chen, Chii-Wen ; Huang, K.C. ; Liang, Mong-Song ; Wuu, S.G.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/1997 12:00:00 AM
Abstract :
In this letter, the impacts of electrostatic charging damage on the characteristics and gate oxide integrity of polysilicon thin-film transistors (TFT´s) during plasma hydrogenation were investigated. Hydrogen atoms can passivate trap states in the polysilicon channel, however, plasma processing induced the effect of electrostatic charging damages the gate oxide and the oxide/channel interface. The passivating effect of hydrogen atoms is hence antagonized by the generated interface states. TFT´s with different area of antennas were used to study the damages caused by electrostatic field.
Keywords :
elemental semiconductors; interface states; passivation; semiconductor device reliability; silicon; surface charging; thin film transistors; Si:H; antenna area; electrostatic charging damage; gate oxide integrity; interface states; passivation; plasma hydrogenation; polysilicon thin-film transistor; reliability; trap states; Electrodes; Electrostatics; Hydrogen; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma sources; Silicon; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
